Recently, The team of Professor Sun Wenhong from SKL is entitled "Multilayered BCST/PZT Thin Films on GaN Substrate for Ultraviolet Photodetector Applications" was published in the Journal of Alloys and Compounds.

In the realm of photodetection, there has been growing interest in Ferroelectric/ semiconductors heterostructures due to the interfacial charge coupling resulting from ferroelectric polarization. In this study, we created a thin film consisting of alternating layers of Ba_0.86Ca_0.14Ti_0.9Sn_0.1O₃and PbZr_0.52Ti_0.48O₃(referred to as BCST/PZT) using a sol-gel growth method on a (0001) GaN/c-sapphire template. Our objective was to examine the impact of these films on the optoelectronic properties of ferroelectric/GaN heterojunctions. Our findings indicate that the BCST/PZT multilayer films possess improved ferroelectric properties. Furthermore, the multilayer structure demonstrates outstanding optoelectronic performance compared to the individual BCST/GaN or PZT/GaN structures, particularly within the 1 V to 3 V bias range. Notably, the multilayer thin film/GaN devices exhibit a responsivity of 121.4 mA/W and a detectivity of 1.44 × 10¹¹Jones under a 1 V bias voltage. In contrast to other GaN-based materials documented in the literature, our straightforward sol-gel techniques yielded devices exhibiting UV photodetection characteristics that are either comparable to or superior than those reported.